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GaN-on-Silicon RF Power Devices

Specializing in the development and manufacturing of gallium nitride-on-silicon (GaN-on-Si) RF power devices, Nitronex is the global leader in high-performance GaN-on-Si RF power devices.

Based on its patented SIGANTIC® process – gallium nitride on silicon technology – Nitronex is at the forefront of commercializing GaN technology for RF applications. The company’s ability to combine the disciplines of material growth, wafer processing, device design and wireless applications knowledge is unique to the industry.

Nitronex was founded in 1999 by graduates of the wide bandgap program at North Carolina State University and is headquartered in Durham, North Carolina. It holds 19 patents with 19 others pending.


Fully qualified products available in volume quantities
Nitronex is the only fully-qualified supplier of Gallium Nitride-on-Silicon RF power transistors for wireless communications applications.

Our SIGANTIC® manufacturing process delivers GaN-on-Silicon RF power transistors to meet the increasing power, frequency and bandwidth requirements found in the communication infrastructure and military markets.

Process technology
Nitronex develops and manufactures a wide range of gallium nitride on silicon (GaN-on-Si) RF power transistors for commercial and military communications markets.

By combining the high performance attributes of GaN with the economies of Si wafer substrates, we can deliver ultra-high performance devices at a competitive price point.
Our current portfolio includes 2.5GHz, 3.5GHz, and broadband power transistors from 5W to over 100W power cases

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